DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 304
DF2377RVFQ33W
Manufacturer Part Number
DF2377RVFQ33W
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33W
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
TPC1 and TPC0 of DRACCR is also valid in refresh cycles, the command interval can be
extended by the RCW1 and RCW0 bits after the precharge cycles.
T
T
T
T
T
T
Rp1
Rp2
Rrw
Rr
Rc1
Rc2
φ
SDRAMφ
Address bus
Precharge-sel
RAS
CAS
WE
CKE
High
PALL
NOP
REF
NOP
Figure 6.55 Auto Refresh Timing
(TPC = 1, TPC0 = 1, RCW1 = 0, RCW0 = 1)
When the interval specification from the REF command to the ACTV cannot be satisfied, setting
the RLW1 and RLW0 bits of REFCR enables one to three wait states to be inserted in the refresh
cycle. Set the optimum number of waits according to the synchronous DRAM connected and the
operating frequency of this LSI. Figure 6.56 shows the timing when one wait state is inserted.
Rev.7.00 Mar. 18, 2009 page 236 of 1136
REJ09B0109-0700
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