DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 934
DF2377RVFQ33W
Manufacturer Part Number
DF2377RVFQ33W
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33W
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 21 Flash Memory (0.18-μm F-ZTAT Version)
21.1.3
This LSI’s flash memory is configured by the 256-kbyte/384-kbyte/512-kbyte user MAT and 8-
kbyte user boot MAT.
The start address is allocated to the same address in the user MAT and user boot MAT. Therefore,
when the program execution or data access is performed between two MATs, the MAT must be
switched by using FMATS.
The user MAT or user boot MAT can be read in all modes if it is in ROM valid mode. However,
the user boot MAT can be programmed only in boot mode and PROM mode.
The size of the user MAT is different from that of the user boot MAT. An address which exceeds
the size of the 8-kbyte user boot MAT should not be accessed. If the attempt is made, data is read
as undefined value.
Rev.7.00 Mar. 18, 2009 page 866 of 1136
REJ09B0109-0700
Address H'03FFFF
(H'05FFFF/H'07FFFF)
Address H'000000
Flash MAT Configuration
Figure 21.3 Flash Memory Configuration
<User MAT>
256 kbytes
(384 kbytes/512 kbytes)
Address H'001FFF
Address H'000000
<User Boot MAT>
8 kbytes
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