DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 48

• Manufacturer Part Number: DF2377RVFQ33W
• Description: IC H8S MCU FLASH 3V 384K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2377RVFQ33W

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Figure 6.48 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
Figure 6.49 DQMU and DQML Control Timing (Upper Byte Write Access:
Figure 6.50 DQMU and DQML Control Timing (Lower Byte Read Access:
Figure 6.51 Example of DQMU and DQML Byte Control ........................................................ 230
Figure 6.52 Operation Timing of Burst Access (BE = 1, SDWCD = 0, CAS Latency 2) ......... 232
Figure 6.53 Example of Operation Timing in RAS Down Mode (BE = 1, CAS Latency 2)..... 234
Figure 6.54 Auto Refresh Timing............................................................................................... 235
Figure 6.55 Auto Refresh Timing (TPC = 1, TPC0 = 1, RCW1 = 0, RCW0 = 1)..................... 236
Figure 6.56 Auto Refresh Timing (TPC = 0, TPC0 = 0, RLW1 = 0, RLW0 = 1) ..................... 237
Figure 6.57 Self-Refresh Timing (TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0,
Figure 6.58 Example of Timing when Precharge Time after Self-Refreshing Is Extended
Figure 6.59 Synchronous DRAM Mode Setting Timing............................................................ 240
Figure 6.60 Example of DACK/EDACK Output Timing when DDS = 1 or EDDS = 1 ............ 242
Figure 6.61 Example of DACK/EDACK Output Timing when DDS = 0 or EDDS = 0 ............ 244
Figure 6.62 Example of Timing when the Read Data Is Extended by Two States
Figure 6.63 Example of Burst ROM Access Timing (ASTn = 1, 2-State Burst Cycle) ............. 247
Figure 6.64 Example of Burst ROM Access Timing (ASTn = 0, 1-State Burst Cycle) ............. 248
Figure 6.65 Example of Idle Cycle Operation (Consecutive Reads in Different Areas) ............ 249
Figure 6.66 Example of Idle Cycle Operation (Write after Read) .............................................. 250
Figure 6.67 Example of Idle Cycle Operation (Read after Write) .............................................. 251
Figure 6.68 Relationship between Chip Select (CS) and Read (RD) ......................................... 252
Figure 6.69 Example of DRAM Full Access after External Read (CAST = 0).......................... 253
Figure 6.70 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.71 Example of Idle Cycle Operation in RAS Down Mode (Write after Read)
Figure 6.72 Example of Synchronous DRAM Full Access after External Read
Figure 6.73 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.74 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.75 Example of Idle Cycle Operation in RAS Down Mode
Rev.7.00 Mar. 18, 2009 page xlvi of lxvi
REJ09B0109-0700
(SDWCD = 1) ......................................................................................................... 227
SDWCD = 0, CAS Latency 2) ................................................................................ 228
CAS Latency 2) ....................................................................................................... 229
RLW1 = 0, RLW0 = 0) ........................................................................................... 238
by 2 States (TPCS2 to TPCS0 = H'2, TPC1 = 0, TPC0 = 0, CAS Latency 2) ........ 239
(DDS = 1, or EDDS = 1, RDXC1 = 0, RDXC0 = 1, CAS Latency 2) .................... 245
(Consecutive Reads in Different Areas) (IDLC = 0, RAST = 0, CAST = 0) .......... 254
(IDLC = 0, RAST = 0, CAST = 0).......................................................................... 254
(CAS Latency 2)...................................................................................................... 255
(Read in Different Area) (IDLC = 0, CAS Latency 2) ............................................ 256
(Read in Different Area) (IDLC = 1, CAS Latency 2) ............................................ 257
(Write after Read) (IDLC = 0, CAS Latency 2) ...................................................... 258