DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 309
DF2377RVFQ33W
Manufacturer Part Number
DF2377RVFQ33W
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33W
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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6.7.15
When burst mode is selected on the synchronous DRAM interface, the DACK and EDACK output
timing can be selected with the DDS and EDDS bits in DRAMCR. When continuous synchronous
DRAM space is accessed in DMAC/EXDMAC single address mode at the same time, these bits
select whether or not burst access is to be performed. The establishment time for the read data can
be extended in the clock suspend mode irrespective of the settings of the DDS and EDDS bits.
(1) Output Timing of DACK or EDACK
When DDS = 1 or EDDS = 1: Burst access is performed by determining the address only,
irrespective of the bus master. With the synchronous DRAM interface, the DACK or EDACK
output goes low from the T
Figure 6.60 shows the DACK or EDACK output timing for the synchronous DRAM interface
when DDS = 1 or EDDS = 1.
DMAC and EXDMAC Single Address Transfer Mode and Synchronous DRAM
Interface
c1
state.
Rev.7.00 Mar. 18, 2009 page 241 of 1136
Section 6 Bus Controller (BSC)
REJ09B0109-0700
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