DSPIC33FJ128MC804-H/ML Microchip Technology, DSPIC33FJ128MC804-H/ML Datasheet - Page 77

• Manufacturer Part Number: DSPIC33FJ128MC804-H/ML
• Description: 16-bit DSC, 128KB Flash, Motor, CAN, DMA, 40 MIPS, NanoWatt 44 QFN 8x8x0.9mm TUB
• Manufacturer: Microchip Technology
• Series: dsPIC™ 33Fr

Specifications of DSPIC33FJ128MC804-H/ML

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 35
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 9x10b/12b, D/A 6x16b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 140°C
• Package / Case: 44-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5.0
The dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/
X04 and dsPIC33FJ128MCX02/X04 devices contain
internal Flash program memory for storing and
executing application code. The memory is readable,
writable and erasable during normal operation over the
entire V
Flash memory can be programmed in two ways:
• In-Circuit Serial Programming™ (ICSP™)
• Run-Time Self-Programming (RTSP)
ICSP
dsPIC33FJ64MCX02/X04 and dsPIC33FJ128MCX02/
X04 device to be serially programmed while in the end
application circuit. This is done with two lines for
FIGURE 5-1:
© 2011 Microchip Technology Inc.
dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04
programming capability
Note 1: This data sheet summarizes the features
DD
2: Some registers and associated bits
FLASH PROGRAM MEMORY
allows
range.
of
dsPIC33FJ64MCX02/X04
dsPIC33FJ128MCX02/X04
devices. It is not intended to be a
comprehensive reference source. To
complement the information in this data
sheet, refer to Section 5. “Flash
Programming”
“dsPIC33F/PIC24H Family Reference
Manual”, which is available from the
Microchip
(www.microchip.com).
described in this section may not be
available on all devices. Refer to
Section 4.0 “Memory Organization”
this data sheet for device-specific register
and bit information.
Using
Program Counter
Using
Table Instruction
User/Configuration
Space Select
the
a
ADDRESSING FOR TABLE REGISTERS
dsPIC33FJ32MC302/304,
dsPIC33FJ32MC302/304,
(DS70191)
web
1/0
0
family
TBLPAG Reg
8 bits
of
and
site
the
of
in
Program Counter
24-bit EA
24 bits
programming clock and programming data (one of the
alternate programming pin pairs: PGECx/PGEDx), and
three other lines for power (V
Master Clear (MCLR). This allows customers to
manufacture boards with unprogrammed devices and
then program the digital signal controller just before
shipping the product. This also allows the most recent
firmware or a custom firmware to be programmed.
RTSP is accomplished using TBLRD (table read) and
TBLWT (table write) instructions. With RTSP, the user
application can write program memory data either in
blocks or ‘rows’ of 64 instructions (192 bytes) at a time
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 512 instructions (1536
bytes) at a time.
5.1
Regardless of the method used, all programming of
Flash memory is done with the table read and table
write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits <7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in
The TBLRDL and the TBLWTL instructions are used to
read or write to bits <15:0> of program memory.
TBLRDL and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits <23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
Working Reg EA
16 bits
Table Instructions and Flash
Programming
0
DD
Byte
Select
Figure
), ground (V
DS70291E-page 77
5-1.
SS
) and