TMP86FH46ANG(Z) Toshiba, TMP86FH46ANG(Z) Datasheet - Page 165

• Manufacturer Part Number: TMP86FH46ANG(Z)
• Description: IC MCU 8BIT FLASH 16KB 42-SDIP
• Manufacturer: Toshiba
• Series: TLCS-870/Cr

Specifications of TMP86FH46ANG(Z)

• Core Processor: 870/C
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: SIO, UART/USART
• Peripherals: LED, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 42-SDIP (0.600", 15.24mm)
• Processor Series: TLCS-870
• Core: 870/C
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SIO, UART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: BMSKTOPAS86FH47(AND), BM1040R0A, BMP86A100010A, BMP86A100010B, BMP86A200010B, BMP86A200020A, BMP86A300010A, BMP86A300020A, BMP86A300030A, SW89CN0-ZCC, SW00MN0-ZCC
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• For Use With: BM1401W0A-G - FLASH WRITER ON-BOARD PROGRAMTMP86C909XB - EMULATION CHIP FOR TMP86F SDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: TMP86FH46ANGZ

14.4.2 Flash Memory Control in the MCU mode
14.4.2.1 How to write to the flash memory by executing a user write control program in the
Before execution of the control program, copy the control program into the RAM area or obtain it from the
external using the communication pin. The procedures to execute the control program in the RAM area in the
MCU mode are described below.
In the MCU mode, write operations are performed by executing the control program in the RAM area.
RAM area (in the MCU mode)
by the control program in the RAM area.)
(Steps 1 and 2 are controlled by the program in the flash memory, and steps 3 through 11 are controlled
Note 1: Before writing to the flash memory in the RAM area, disable interrupts by setting the interrupt master
Note 2: When writing to the flash memory, do not intentionally use non-maskable interrupts (the watchdog
1. Transfer the write control program to the RAM area.
2. Jump to the RAM area.
3. Disable (DI) the interrupt master enable flag (IMF←"0").
4. Disable the watchdog timer, if it is used.
5. Set FLSCR<FLSMD> to "0011B" (to enable command sequence execution).
6. Execute the erase command sequence.
7. Read the same flash memory address twice.
8. Execute the write command sequence.
9. Read the same flash memory address twice.
10. Set FLSCR<FLSMD> to "1100B" (to disable command sequence execution).
11. Jump to the flash memory area.
(Repeat step 7 until the same data is read by two consecutive read operations.)
(Repeat step 9 until the same data is read by two consecutive read operations.)
enable flag (IMF) to "0". Usually disable interrupts by executing the DI instruction at the head of the
write control program in the RAM area.
timer must be disabled if it is used). If a non-maskable interrupt occurs while the flash memory is
being written, unexpected data is read from the flash memory (interrupt vector), resulting in malfunc-
tion of the microcontroller.
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