ST7FMC1K2B3 STMICROELECTRONICS [STMicroelectronics], ST7FMC1K2B3 Datasheet - Page 260

• Manufacturer Part Number: ST7FMC1K2B3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ST7MC1xx/ST7MC2xx
12.6 MEMORY CHARACTERISTICS
12.6.1 RAM and Hardware Registers
12.6.2 FLASH Memory
Notes:
1. Minimum V
(only in Halt mode). Not tested in production.
2. Data based on characterization results, not tested in production.
3. V
4. Data based on simulation results, not tested in production
5. In Write/Erase mode the I
260/309
DUAL VOLTAGE HDFLASH MEMORY
Symbol
Symbol
T
T
N
ERASE
V
f
t
t
PP
V
PROG
CPU
I
VPP
RET
PP
RM
RW
PP
must be applied only during the programming or erasing operation and not permanently for reliability reasons.
Data retention mode
DD
Operating frequency
Programming voltage
V
Internal V
Data retention
Write erase cycles
Programming or erasing tempera-
ture range
PP
supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in hardware registers
current
PP
Parameter
4) 5)
Parameter
stabilization time
DD
supply current consumption is the same as in Run mode
1)
3)
Halt mode (or RESET)
Read mode
Write / Erase mode
4.5V
Read (V
Write / Erase
T
T
T
T
A
A
A
A
=85°C
=105°C
=125°C
=25°C
≤
Conditions
V
Conditions
DD
PP
=12V)
≤
5.5V
Min
1.6
Min
11.4
100
-40
40
15
0
1
7
2)
(section 12.4.1 on page
Typ
Typ
10
25
Max
Max
12.6
200
30
85
8
8
2)
cycles
Unit
years
252)
Unit
MHz
mA
V
µA
°C
μs
V