ATMEGA324P-A15MZ Atmel, ATMEGA324P-A15MZ Datasheet - Page 261

• Manufacturer Part Number: ATMEGA324P-A15MZ
• Description: MCU AVR 32KB FLASH 15MHZ 44-VQFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA324P-A15MZ

• Package / Case: 44-VQFN Exposed Pad
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 32
• Eeprom Size: 1K x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Program Memory Size: 32KB (32K x 8)
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: I²C, SPI, UART/USART
• Core Size: 8-Bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
Programming the
Flash
2503N–AVR–06/08
The following algorithm puts the device in Parallel Programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least 6 times
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
Note, if External Crystal or External RC configuration is selected, it may not be possible to apply
qualified XTAL1 pulses. In such cases, the following algorithm should be followed:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Wait 100 µs.
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0b0.
6. Entering Programming mode with the original algorithm, as described above.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
program data is latched into a page buffer. This allows one page of program data to be pro-
ns.
has been applied to RESET, will cause the device to fail entering Programming mode.
RESET.
(CKSEL3:0 = 0b0000) If Lock bits are programmed, a Chip Erase command must be
executed before changing the fuses.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value $FF, that is the contents of the entire EEPROM (unless the
EESAVE fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed.
CC
CC
and GND, and wait at least 100 µs.
and GND simultanously as 11.5 - 12.5V is applied to
Table 109 on page 260
Table 106 on page
Table 109 on page 260
(1)
memories plus Lock bits. The Lock bits are
258. When programming the Flash, the
to “0000”.
to “0000” and wait at least 100
ATmega32(L)
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