D13007VX13V Renesas Electronics America, D13007VX13V Datasheet - Page 154

MCU 3V 0K 100-TQFP

D13007VX13V

Manufacturer Part Number
D13007VX13V
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of D13007VX13V

Core Processor
H8/300H
Core Size
16-Bit
Speed
13MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
35
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
6. Bus Controller
Bit 0⎯Refresh Pin Enable (RFSHE): Enables or disables RFSH pin refresh signal output. If
areas 2 to 5 are not designated as DRAM space, this bit should not be set to 1.
Bit 0
RFSHE
0
1
6.2.8
Bit
Initial value
Read/Write
DRCRB is an 8-bit readable/writable register that selects the number of address multiplex column
address bits for the DRAM interface, the column address strobe output pin, enabling or disabling
of refresh cycle insertion, the number of precharge cycles, enabling or disabling of wait state
insertion between RAS and CAS, and enabling or disabling of wait state insertion in refresh
cycles.
DRCRB is initialized to H'08 by a reset and in hardware standby mode. It is not initialized in
software standby mode.
The settings in this register are invalid when bits DRAS2 to DRAS0 in DRCRA are all 0.
Rev.5.00 Sep. 12, 2007 Page 124 of 764
REJ09B0396-0500
DRAM Control Register B (DRCRB)
MXC1
R/W
Description
RFSH pin refresh signal output disabled
(RFSH pin can be used as input/output port)
RFSH pin refresh signal output enabled
7
0
MXC0
R/W
6
0
CSEL
R/W
5
0
RCYCE
R/W
4
0
3
1
TPC
R/W
2
0
RCW
R/W
1
0
(Initial value)
RLW
R/W
0
0

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