D13007VX13V Renesas Electronics America, D13007VX13V Datasheet - Page 206

MCU 3V 0K 100-TQFP

D13007VX13V

Manufacturer Part Number
D13007VX13V
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of D13007VX13V

Core Processor
H8/300H
Core Size
16-Bit
Speed
13MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
35
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
6. Bus Controller
6.8
6.8.1
With the H8/3006 and H8/3007, external space area 0 can be designated as burst ROM space, and
burst ROM space interfacing can be performed. The burst ROM interface enables ROM with burst
access capability to be accessed at high speed. Area 0 is designated as burst ROM space by means
of the BROME bit in BCR.
Continuous burst access of a maximum or four or eight words can be performed on external space
area 0. Two or three states can be selected for burst access.
6.8.2
The number of states in the initial cycle (full access) and a burst cycle of the burst ROM interface
is determined by the setting of the AST0 bit in ASTCR. When the AST0 bit is set to 1, wait states
can also be inserted in the initial cycle. Wait states cannot be inserted in a burst cycle.
Burst access of up to four words is performed when the BRSTS0 bit is cleared to 0 in BCR, and
burst access of up to eight words when the BRSTS0 bit is set to 1. The number of burst access
states is two when the BRSTS1 bit is cleared to 0, and three when the BRSTS1 bit is set to 1.
The basic access timing for burst ROM space is shown in figure 6.40.
Rev.5.00 Sep. 12, 2007 Page 176 of 764
REJ09B0396-0500
Burst ROM Interface
Basic Timing
Overview

Related parts for D13007VX13V