HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 405
![no-image](/images/manufacturer_photos/0/5/560/renesas_electronics_america_sml.jpg)
HD64F3337YCP16
Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Specifications of HD64F3337YCP16
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Quantity
Price
Company:
Part Number:
HD64F3337YCP16
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F3337YCP16V
Manufacturer:
COILMASTER
Quantity:
30 000
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Part Number:
HD64F3337YCP16V
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19.1
19.1.1
Table 19.1 illustrates the principle of operation of the H8/3334YF’s on-chip flash memory.
Like EPROM, flash memory is programmed by applying a high gate-to-drain voltage that draws
hot electrons generated in the vicinity of the drain into a floating gate. The threshold voltage of a
programmed memory cell is therefore higher than that of an erased cell. Cells are erased by
grounding the gate and applying a high voltage to the source, causing the electrons stored in the
floating gate to tunnel out. After erasure, the threshold voltage drops. A memory cell is read like
an EPROM cell, by driving the gate to the high level and detecting the drain current, which
depends on the threshold voltage. Erasing must be done carefully, because if a memory cell is
overerased, its threshold voltage may become negative, causing the cell to operate incorrectly.
Section 19.4.6 shows an optimal erase control flowchart and sample program.
Table 19.1 Principle of Memory Cell Operation
Memory
cell
Memory
array
(32-kbyte Dual-Power-Supply Flash Memory Version)
Flash Memory Overview
Flash Memory Operating Principle
Program
Vd
Vg = V
PP
0 V
Vd
V
0 V
0 V
Section 19 ROM
PP
Erase
Vs = V
PP
Open
Open
Open
0 V
V
0 V
PP
Read
Vd
Vg
0 V
Vd
V
0 V
0 V
373
CC
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