HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 462

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

(7) Design a current margin into the programming voltage (V
) power supply. Ensure that
PP
V
will not depart from 12.0 0.6 V (11.4 V to 12.6 V) during programming or erasing.
PP
Programming and erasing may become impossible outside this range.
(8) Ensure that peak overshoot does not exceed the rated value at the FV
and MD
pins.
PP
1
Connect decoupling capacitors as close to the FV
and MD
pins as possible.
PP
1
Also connect decoupling capacitors to the MD
pin in the same way when boot mode is uesd.
1
FV
12 V
PP
H8/3334YF
1.0 F
0.01 F
Figure 19.21 V
Power Supply Circuit Design (Example)
PP
(9) Use the recommended algorithms for programming and erasing flash memory. These
algorithms are designed to program and erase without subjecting the device to voltage stress and
without sacrificing the reliability of programmed data.
Before setting the program (P) or erase (E) bit in the flash memory control register (FLMCR), set
the watchdog timer to ensure that the P or E bit does not remain set for more than the specified
time.
(10) For details on interrupt handling while flash memory is being programmed or erased,
see the notes on NMI interrupt handling in section 19.4.9, Interrupt Handling during Flash
Memory Programming and Erasing.
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