HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 410
![no-image](/images/manufacturer_photos/0/5/560/renesas_electronics_america_sml.jpg)
HD64F3337YCP16
Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Specifications of HD64F3337YCP16
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F3337YCP16
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F3337YCP16V
Manufacturer:
COILMASTER
Quantity:
30 000
Company:
Part Number:
HD64F3337YCP16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 410 of 749
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Bit 1—Erase Mode (E):
Bit 1: E
0
1
Bit 0—Program Mode (P):
Bit 0: P
0
1
Notes: *1 Do not set two or more of these bits simultaneously. Do not release or shut off the V
19.2.2
EBR1 is an 8-bit register that designates large flash-memory blocks for programming and erasure.
EBR1 is initialized to H'F0 by a reset, in the standby modes, and when 12 V is not applied to the
FV
programmed and erased. Figure 19.2 and table 19.6 show details of a block map.
Note: * The initial value is H'F0 in modes 2 and 3 (on-chip ROM enabled). In mode 1 (on-chip ROM
378
Bit
Initial value
Read/Write
PP
pin. When a bit in EBR1 is set to 1, the corresponding block is selected and can be
disabled), this register cannot be modified and always reads H'FF. For information on
accessing this register, refer to in section 19.7 Flash Memory Programming and erasing
Precautions (11).
*2 Set the P or E bit according to the instructions given in section 19.4, Programming and
Erase Block Register 1 (EBR1)
or V
Erasing Flash Memory.
Set the watchdog timer beforehand to make sure that these bits do not remain set for
longer than the specified times.
For notes on use, see section 19.7, Flash Memory Programming and Erasing
Precautions.
PP
power supply when these bits are set.
Description
Exit from erase mode
Transition to erase mode
Description
Exit from program mode
Transition to program mode
—
—
7
1
*1, *2
*1, *2
Selects transition to or exit from erase mode.
—
—
6
1
Selects transition to or exit from program mode.
—
—
5
1
—
—
4
1
R/W*
LB3
3
0
R/W*
LB2
2
0
R/W*
LB1
1
0
(Initial value)
(Initial value)
R/W*
LB0
0
0
CC
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