HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 423

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

User Programming Mode Execution Procedure (Example)*: Figure 19.7 shows the execution
procedure for user programming mode when the on-board update routine is executed in RAM.
Note: * Do not apply 12 V to the FV
1
2
3
4
5
6
7
8
Note: * After the update is finished, when input of 12 V to the FV
from being accidentally programmed or erased due to program runaway etc., apply 12 V
to FV
overerasing due to program runaway can cause memory cells to malfunction. While 12 V
is applied, the watchdog timer should be running and enabled to halt runaway program
execution, so that program runaway will not lead to overprogramming or overerasing. For
details on applying, releasing, and shutting off V
Programming and Erasing Precautions (5).
Transfer on-board update routine
Branch to flash memory on-board
memory read setup time (t
executed. This is the required setup time from when the FV
2 V) level after 12 V is released until flash memory can be read.
on-board update routine in RAM
PP
(exit user programming mode)
Set MD
Branch to application program
only when programming or erasing flash memory. Overprogramming or
(apply V
(user programming mode)
on-board update program
Figure 19.7 User Programming Mode Operation (Example)
Branch to flash memory
(update flash memory)
update routine in RAM
Execute flash memory
in flash memory *
Start from reset
1
Release FV
FV
and MD
IH
into RAM
PP
to V
= 12 V
CC
0
to 10 or 11
to MD
PP
PP
FRS
1
pin during normal operation. To prevent flash memory
)
) must elapse before any program in flash memory is
6. Execute the flash memory on-board
7. Change the voltage at the FV
8. After the on-board update of flash
1. Set MD1 and MD0 of the H8/3334YF
2. Branch to the flash memory on-board
3. Transfer the on-board update routine
4. Branch to the on-board update routine
5. Apply 12 V to the FV
Procedure
The flash memory on-board update
program is written in flash memory ahead
of time by the user.
PP
memory ends, execution branches to
an application program in flash
memory.
that was transferred into RAM.
user programming mode.
update routine in RAM, to perform an
on-board update of the flash memory.
from 12 V to V
programming mode.
to 10 or 11, and start from a reset.
update program in flash memory.
into RAM.
, see section 19.7, Flash Memory
PP
PP
pin is released, the flash
CC
pin reaches the (V
, to exit user
PP
pin, to enter
PP
pin
CC
+
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