HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 503
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HD64F3337YCP16
Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Specifications of HD64F3337YCP16
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Company:
Part Number:
HD64F3337YCP16
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Part Number:
HD64F3337YCP16V
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HD64F3337YCP16V
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Hardware Protection: Suspends or disables the programming and erasing of flash memory, and
resets the flash memory control register (FLMCR) and erase block registers (EBR1 and EBR2).
Details of hardware protection are as follows.
Protection
Programing
voltage (V
protect
Reset and
standby
protect
Interrupt
protect
Notes: *1 Three modes: program-verify, erase-verify, and prewrite-verify.
20.4.9
If an interrupt occurs
FLMCR is set), the following operating states can occur.
If an interrupt is generated during programming or erasing, programming or erasing is aborted
to protect the flash memory. Since memory cell values after a forced interrupt are
indeterminate, the system will not operate correctly after such an interrupt.
Program runaway may result because the vector table could not be read correctly in interrupt
exception handling during programming or erasure
*2 All blocks are erase-disabled. It is not possible to specify individual blocks.
*3 For details, see section 20.7, Flash Memory Programming and Erasing Precautions.
Interrupt Handling during Flash Memory Programming and Erasing
PP
)
Description
When 12 V is not applied to the FV
FLMCR, EBR1, and EBR2 are initialized,
disabling programming and erasing. To obtain
this protection, V
When a reset occurs (including a watchdog
timer reset) or standby mode is entered,
FLMCR, EBR1, and EBR2 are initialized,
disabling programming and erasing. Note that
RES input does not ensure a reset unless the
RES pin is held low for at least 20 ms at power-
up (to enable the oscillator to settle), or at least
ten system clock cycles (10ø) during operation.
To prevent damage to the flash memory, if
interrupt input occurs while flash memory is
being programmed or erased, programming or
erasing is aborted immediately. The settings in
FLMCR, EBR1, and EBR2 are retained. This
type of protection can be cleared only by a
reset.
*1
while flash memory is being programmed or erased (while the P or E bit of
PP
should not exceed V
PP
pin,
CC
*2
.
.
*3
Program
Disabled
Disabled
Disabled
Function
Erase
Disabled
Disabled
Disabled
*2
*2
*2
Verify
Disabled
Disabled
Enabled
*1
471
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