HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 488

no-image

HD64F3337YCP16

Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheets

Specifications of HD64F3337YCP16

Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3337YCP16
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3337YCP16V
Manufacturer:
COILMASTER
Quantity:
30 000
Part Number:
HD64F3337YCP16V
Manufacturer:
RENESAS
Quantity:
1 029
Part Number:
HD64F3337YCP16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
PVOK:
NGEND:
20.4.4
To erase the flash memory, follow the erasing algorithm shown in figure 20.9. This erasing
algorithm can erase data without subjecting the device to voltage stress or impairing the reliability
of programmed data.
To erase flash memory, before starting to erase, first place all memory data in all blocks to be
erased in the programmed state (program all memory data to H'00). If all memory data is not in the
programmed state, follow the sequence described later to program the memory data to zero. Select
the flash memory areas to be erased with erase block registers 1 and 2 (EBR1 and EBR2). Next set
the E bit in FLMCR, selecting erase mode. The erase time is the time during which the E bit is set.
To prevent overerasing, To prevent overerasing, use a software timer to divide the time for a
single erase, and ensure that the total time does not exceed 30 seconds. For the time for a single
erase, refer to section 20.4.6, Erase Flowchart and Sample Programs. Overerasing, due to program
runaway for example, can give memory cells a negative threshold voltage and cause them to
operate incorrectly. Before selecting erase mode, set up the watchdog timer so as to prevent
overerasing.
20.4.5
In erase-verify mode, after data has been erased, it is read to check that it has been erased
correctly. After the erase time has elapsed, exit erase mode (clear the E bit to 0) and select erase-
verify mode (set the EV bit to 1). Before reading data in erase-verify mode, write H'FF dummy
data to the address to be read. This dummy write applies an erase-verify voltage to the memory
cells at the latched address. If the flash memory is read in this state, the data at the latched address
will be read. After the dummy write, wait 2 s or more before reading. When performing the
initial dummy write, wait 4 s or more after selecting erase-verify mode. If the read data has been
successfully erased, perform an erase-verify (dummy write, wait 2 s or more, then read) for the
next address. If the read data has not been erased, select erase mode again and repeat the same
erase and erase-verify sequence through the last address. Do not repeat the erase and erase-verify
sequence more than 602 times, however.
456
Erase Mode
Erase-Verify Mode
CMP.B
BEQ
ADD.W
BRA
BCLR
MOV.B
MOV.B
One byte programmed
Programming error
#H'32,
NGEND
R5,
PRGMS
#2,
#H'00,
R6L,
@FLMCR:8
R6L
@EBR*:8
R6L
R5
; Program-verify executed 6 times?
; If program-verify executed 6 times, branch to NGEND
; Programming time
; Program again
;
; Clear EBR
;
Clear PV bit
*
2

Related parts for HD64F3337YCP16