HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 412

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HD64F3337YCP16

Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheets

Specifications of HD64F3337YCP16

Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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19.2.4
WSCR is an 8-bit readable/writable register that enables flash-memory updates to be emulated in
RAM. It also controls frequency division of clock signals supplied to the on-chip supporting
modules and insertion of wait states by the wait-state controller.
WSCR is initialized to H'08 by a reset and in hardware standby mode. It is not initialized in
software standby mode.
Bits 7 and 6—RAM Select and RAM0 (RAMS and RAM0): These bits are used to reassign an
area to RAM (see table 19.5). These bits are write-enabled and their initial value is 0. They are
initialized by a reset and in hardware standby mode. They are not initialized in software standby
mode.
If only one of bits 7 and 6 is set, part of the RAM area can be overlapped onto the small-block
flash memory area. In that case, access is to RAM, not flash memory, and all flash memory blocks
are write/erase-protected (emulation protect
program or erase mode, even if the P bit or E bit in the flash memory control register (FLMCR) is
set (although verify mode can be selected). Therefore, clear both of bits 7 and 6 before
programming or erasing the flash memory area.
If both of bits 7 and 6 are set, part of the RAM area can be overlapped onto the small-block flash
memory area, but this overlapping begins only when an interrupt signal is input while 12 V is
being applied to the FV
interrupt handling while flash memory is being programmed or erased.
Table 19.5 RAM Area Reassignment
Bit 7: RAMS
0
1
380
Bit
Initial value
Read/Write
Wait-State Control Register (WSCR)
RAMS
R/W
Bit 6: RAM0
0
1
0
1
7
0
PP
pin. Up until that point, flash memory is accessed. Use this setting for
RAM0
R/W
6
0
CKDBL
R/W
RAM Area
None
H'FC80 to H'FCFF
H'FC80 to H'FD7F
H'FC00 to H'FC7F
*3
5
0
*1
). In this state, the mode cannot be changed to
R/W
4
0
WMS1
R/W
3
1
WMS0
ROM Area
H'0080 to H'00FF
H'0080 to H'017F
H'0000 to H'007F
*2
R/W
2
0
WC1
R/W
1
0
WC0
R/W
0
0

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