HD6417750SBP200 Renesas Electronics America, HD6417750SBP200 Datasheet - Page 532

IC SUPERH MPU ROMLESS 256BGA

HD6417750SBP200

Manufacturer Part Number
HD6417750SBP200
Description
IC SUPERH MPU ROMLESS 256BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SBP200

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 2.07 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SBP200
Manufacturer:
HITACHI
0
Part Number:
HD6417750SBP200
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Section 13 Bus State Controller (BSC)
Read-Strobe Negate Timing (Setting Only Possible in the SH7750R): When the SRAM
interface is used, timing for the negation of the strobe during read operations can be specified by
the setting of the A1RDH and A4RDH bits of the WCR3 register. For information about this
setting, see the description of the WCR3 register. When a byte control SRAM setting is made,
AnRDH should be cleared to 0.
Rev.7.00 Oct. 10, 2008 Page 446 of 1074
REJ09B0366-0700
Figure 13.13 SRAM Interface Read-Strobe Negate Timing (AnS = 1, AnW = 4, AnH = 2)
CKIO
A25−A0
CSn
RD/WR
RD
D63−D0
BS
Note: * When AnRDH is set to 1
TS1: Setup wait
WCR3.AnS
(0 to 1)
TS1
T1
Tw
Tw
Tw: Access wait
WCR2.AnW
(0 to 15)
Tw
Tw
T2
TH1, TH2: Hold wait
TH1
*
WCR3.AnH
(0 to 3)
TH2

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