HD6417750SBP200 Renesas Electronics America, HD6417750SBP200 Datasheet - Page 555

IC SUPERH MPU ROMLESS 256BGA

HD6417750SBP200

Manufacturer Part Number
HD6417750SBP200
Description
IC SUPERH MPU ROMLESS 256BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SBP200

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 2.07 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SBP200
Manufacturer:
HITACHI
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Part Number:
HD6417750SBP200
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
command output cycle Tc1 to the first read data latch cycle, Td1, can be specified as 1 to 5 cycles
independently for areas 2 and 3 by means of bits A2W2–A2W0 and A3W2–A3W0 in WCR2. This
number of cycles corresponds to the number of synchronous DRAM CAS latency cycles.
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.
CKIO
Bank
Precharge-sel
Address
CSn
RD/WR
RAS
CASS
DQMn
D63–D0
(read)
BS
CKE
DACKn
(SA: IO ← memory)
Figure 13.28 Basic Timing for Synchronous DRAM Burst Read
Tr
Row
Row
Row
Trw
Tc1
H/L
c0
Tc2
Tc3
Tc4/Td1
Rev.7.00 Oct. 10, 2008 Page 469 of 1074
Section 13 Bus State Controller (BSC)
d0
Td2
d1
Td3
d2
Td4
REJ09B0366-0700
d3

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