DF2357F20 Renesas Electronics America, DF2357F20 Datasheet - Page 644

• Manufacturer Part Number: DF2357F20
• Description: IC H8S MCU FLASH 5V 128K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2357F20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

19.13.10 Notes on Memory Programming
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas Technology. For other
19.14
Precautions concerning the use of on-board programming mode, the RAM emulation function, and PROM mode are
summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in excess of the rating can
permanently damage the device. Use a PROM programmer that supports Renesas Technology microcomputer device
types with 128-kbyte on-chip flash memory.
Do not select the HN28F101 setting for the PROM programmer, and only use the specified socket adapter. Incorrect use
will result in damaging the device.
Powering on and off (see figures 19-33 to 19-35): Do not apply a high level to the FWE pin until V
Also, drive the FWE pin low before turning off V
When applying or disconnecting V
The power-on and power-off timing requirements should also be satisfied in the event of a power failure and subsequent
recovery.
FWE application/disconnection (see figures 19-33 to 19-35): FWE application should be carried out when MCU
operation is in a stable condition. If MCU operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to prevent unintentional
programming or erasing of flash memory:
Rev.6.00 Oct.28.2004 page 614 of 1016
REJ09B0138-0600H
Figure 19-32 Oscillation Stabilization Time, Programmer Mode Setup Time, and Power Supply Fall Sequence
When programming addresses which have previously been programmed, carry out auto-erasing before auto-
programming.
When performing programming using PROM mode on a chip that has been programmed/erased in an on-board
programming mode, auto-erasing is recommended before carrying out auto-programming.
Apply FWE when the V
stabilized (after the elapse of the oscillation settling time).
In boot mode, apply and disconnect FWE during a reset.
2. Auto-programming should be performed once only on the same address block.
Flash Memory Programming and Erasing Precautions
chips for which the erasure history is unknown, it is recommended that auto-erasing be executed to check and
supplement the initialization (erase) level.
VCC
RES
FWE
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
t
osc1
CC
voltage has stabilized within its rated voltage range. Apply FWE when oscillation has
t
bmv
CC
, fix the FWE pin low and place the flash memory in the hardware protection state.
Memory read
mode
Command wait
state
CC
.
Auto-program mode
Auto-erase mode
Command
wait state
Normal/
abnormal end
identification
Don't care
Don't care
t
dwn
CC
has stabilized.