DF2357F20 Renesas Electronics America, DF2357F20 Datasheet - Page 979

• Manufacturer Part Number: DF2357F20
• Description: IC H8S MCU FLASH 5V 128K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2357F20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

FLMCR2—Flash Memory Control Register 2
EBR1—Erase Block Specification Register 1
EBR2—Erase Block Specification Register 2
Bit
Initial value
Read/Write
Bit
EBR1
Initial value
Read/Write
Bit
EBR2
Initial value
Read/Write
Flash Memory Error
0
1
:
:
:
:
:
:
:
:
:
Flash memory operates normally. Writing/erasing protect (error protect)
to flash memory is disabled.
[Clearing condition]
Reset or hardware standby mode
Indicates that an error occurs in writing/erasing to flash memory.
Writing/erasing protect (error protect)
to flash memory is enabled.
[Setting condition]
See section 19.19.3, Error Protection
FLER
R
7
0
R/W
EB7
—
—
7
0
7
0
—
—
R/W
EB6
6
0
—
—
6
0
6
0
EB5
R/W
—
—
5
0
—
—
5
0
5
0
H'FFC9
H'FFCA
H'FFCB
EB4
R/W
—
—
—
—
4
0
4
0
4
0
(For the H8S/2398 F-ZTAT)
(For the H8S/2398 F-ZTAT)
(For the H8S/2398 F-ZTAT)
EB11
R/W
R/W
EB3
—
—
3
0
3
0
3
0
EB10
EB2
R/W
R/W
2
0
2
0
—
—
Rev.6.00 Oct.28.2004 page 949 of 1016
2
0
FLASH
FLASH
FLASH
EB1
R/W
EB9
R/W
1
0
1
0
—
—
1
0
EB0
R/W
EB8
R/W
0
0
0
0
REJ09B0138-0600H
—
—
0
0