MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 104

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MT29F4G08ABADAWP:D

Manufacturer Part Number
MT29F4G08ABADAWP:D
Description
MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F4G08ABADAWP:D

Lead Free Status / Rohs Status
Supplier Unconfirmed

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Figure 78: TWO-PLANE BLOCK ERASE
Figure 79: TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
WE#
I/Ox
CE#
ALE
RE#
CLE
60h
Address input (3 cycles)
1st plane
78h
D1h
Optional
t DBSY
Address (3 cycles)
60h
104
Address input (3 cycles)
4Gb, 8Gb: x8, x16 NAND Flash Memory
2nd plane
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WHR
D0h
t AR
Two-Plane Operations
t BERS
t REA
© 2009 Micron Technology, Inc. All rights reserved.
Status output
or 78h
70h
Status
Don‘t Care

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