MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 19

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Figure 12: Array Organization – MT29F8G16 (x16)
Table 5: Array Addressing – MT29F8G16 ( x16)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Second
Fourth
Cycle
Third
Fifth
Cache Register
First
2048 blocks
4096 blocks
Data Register
per plane
per die
I/O[15:8]
LOW
LOW
LOW
LOW
LOW
numbered blocks
Plane 0: even-
(0, 2, 4, 6, ...,
4092, 4094)
1 block
1024
1024
Notes:
Note:
1056 words
BA15
LOW
LOW
I/07
CA7
BA7
1
32
32
1. Die 0, Plane 0: BA18 = 0; BA6 = 0. Die 0, Plane 1: BA18 = 0; BA6 = 1.
1. Block address concatenated with page address = actual page address. CAx = column ad-
2. If CA10 = 1, then CA[9:5] must be 0.
3. Die address boundary: 0 = 0–4Gb; 1 = 4Gb–8Gb.
Die 1, Plane 0: BA18 = 1; BA6 = 0. Die 1, Plane 1: BA18 = 1; BA6 = 1.
dress; PAx = page address; BAx = block address.
numbered blocks
Die 0
Plane 1: odd-
(1, 3, 5, 7, ...,
4093, 4095)
1 block
1024
1024
BA14
1056 words
LOW
LOW
I/06
CA6
BA6
32
32
numbered blocks
(4096, 4098, ...,
BA13
LOW
LOW
Plane 0: even-
I/05
CA5
PA5
8188, 8190)
1 block
1024
1024
1056 words
19
32
32
BA12
LOW
LOW
4Gb, 8Gb: x8, x16 NAND Flash Memory
I/04
CA4
PA4
numbered blocks
Die 1
(4097, 4099, ...,
Plane 1: odd-
Micron Technology, Inc. reserves the right to change products or specifications without notice.
8189, 8191)
1 block
1024
1024
1056 words
BA11
Device and Array Organization
LOW
LOW
I/03
CA3
PA3
32
32
1 page = (1K + 32 words)
1 block = (1K + 32) words x 64 pages
1 plane = (128K + 4K) bytes x 2048 blocks
1 die
1 device = 4224Mb x 2 die
BA18
CA10
BA10
CA2
I/02
PA2
I/O0
3
I/O7
© 2009 Micron Technology, Inc. All rights reserved.
= (64K + 2K) words
= 2112Mb
= 2112Mb x 2 planes
= 4224Mb
= 8448Mb
BA17
CA1
CA9
BA9
I/01
PA1
BA16
I/O0
CA0
CA8
PA0
PA8