MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 27

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Figure 19:
Figure 20:
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
t
t
Fall and
Fall and
Notes:
Notes:
t
t
Rise (3.3V V
Rise (1.8V V
V
V
1.
2.
3.
4.
5. See TC values in Figure 23 (page 29) for approximate Rp value and TC.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1.
2.
3.
4. See TC values in Figure 23 (page 29) for TC and approximate Rp value.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
pedance.
t
t
t
t
t
Fall and
Rise dependent on external capacitance and resistive loading and output transistor im-
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall = 10ns at 3.3V.
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
–1
-1
CC
CC
)
)
t
t
Rise calculated at 10% and 90% points.
Rise are calculated at 10% and 90% points.
0
0
t Fall
2
2
27
t Fall t Rise
4
4Gb, 8Gb: x8, x16 NAND Flash Memory
4
Asynchronous Interface Bus Operation
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TC
TC
0
0
t Rise
2
2
4
4
© 2009 Micron Technology, Inc. All rights reserved.
V
V
CC
6
CC
1.8V
6
3.3V