MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 84

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MT29F4G08ABADAWP:D

Manufacturer Part Number
MT29F4G08ABADAWP:D
Description
MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F4G08ABADAWP:D

Lead Free Status / Rohs Status
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Table 19: Block Lock Address Cycle Assignments
Figure 59: UNLOCK Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
ALE Cycle
First
Second
Third
I/O[15:8]
LOW
LOW
LOW
Notes:
1
WE#
R/B#
BA15
LOW
I/Ox
WP#
CE#
ALE
RE#
I/O7
CLE
BA7
1. I/O[15:8] is applicable only for x16 devices.
2. Invert area bit is applicable for 24h command; it may be LOW or HIGH for 23h command.
Unlock
BA14
LOW
I/O6
BA6
23h
add 1
Block
BA13
LOW
LOW
I/O5
Lower boundary
add 2
Block
84
BA12
LOW
LOW
I/O4
Block
add 3
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
BA11
LOW
LOW
I/O3
24h
BA10
LOW
LOW
I/O2
add 1
Block
Upper boundary
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
add 2
Block
BA17
LOW
I/O1
BA9
add 3
Block
Invert area bit
BA16
I/O0
BA8
2

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