MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 130

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MT29F4G08ABADAWP:D

Manufacturer Part Number
MT29F4G08ABADAWP:D
Description
MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F4G08ABADAWP:D

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Revision History
Rev. G, Production – 10/10
Rev. F, Production – 6/10
Rev. E, Production – 5/10
Rev. D, Advance - 3/10
Rev. C, Advance – 1/10
Rev. B, Advance – 10/09
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
• Removed the words "or by factory (always enabled)" from the General Description
• Replaced blank with 3 for number of valid address cycles on Block Erase Two-Plane in
• Added part numbers to document
• Removed Endurance spec from Features and Parameter Page Data Structure Table
• Filled in missing values to READ ID Table
• Changed
• Replaced Status Register Definition table with the correct one for ECC
• Updated value for byte 113 to 01h; value for byte 114 to 0Eh in Parameter Page Data
• Updated note 6 in Electrical Specifications - Program/Erase Characteristics to say
• Fixed note typo in Features
• Updated OTP Protect - changed to protect by block; removed protect by page
• Updated 1.8V Active Current specs for single die and fixed typos in DC tables
• Updated READ ID Tables to include the following value changes: Byte 1 –
• Added Bare Die Parameter Page Data Structure Table
• Removed Boot Block
• Removed part numbers: MT29F4G08ABBDAWP and MT29F4G16ABBDAWP
• Updated "Internal Data Move with Internal ECC Enabled" graphic spec from
• Updated "Internal Data Move with Random Data Input with Internal ECC Enabled"
• Updated Boot Block Operation to include dual-plane restrictions
• Added
• Added note for
the Two-Plane Command Set Table
Structure Tables
"disabled"
MT29F4G08ABBDA (4Gb, x8, 1.8V) Value: ACh, MT29F4G16ABBDA (4Gb, x16, 1.8V)
Value: BCh; Byte 2 – MT29F4G08ABBDA Value: 90h, MT29F4G16ABBDA Value: 90h;
Byte 3 – MT29F4G08ABBDA Value: 15h, MT29F4G16ABBDA Value: 55h; Byte 4 –
MT29F4G08ABBDA Value: 56h, MT29F4G16ABBDA Value: 56h; Removed H4 from
part numbers
t
graphic spec from
gram/Erase Characteristics
R_ECC
t
RCBSY spec to Electrical Specifications - Program/Erase Characteristics
t
BERS from .5 to .7 in Electrical Specifications – Program/Erase Characteristics
t
PROG and
t
R to
t
R_ECC
t
130
PROG_ECC specifications to Electrical Specifications - Pro-
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Revision History
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R to

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