MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 62

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Two-Plane Read Operations
Two-plane read page operations improve data throughput by copying data from more
than one plane simultaneously to the specified cache registers. This is done by prepend-
ing one or more READ PAGE TWO-PLANE (00h-00h-30h) commands in front of the
READ PAGE (00h-30h) command.
When the die (LUN) is ready, the RANDOM DATA READ TWO-PLANE (06h-E0h) com-
mand determines which plane outputs data. During data output, the following com-
mands can be used to read and modify the data in the cache registers: RANDOM DATA
READ (05h-E0h) and RANDOM DATA INPUT (85h).
Two-Plane Read Cache Operations
Two-plane read cache operations can be used to output data from more than one cache
register while concurrently copying one or more pages from the NAND Flash array to
the data register. This is done by prepending READ PAGE TWO-PLANE (00h-00h-30h)
commands in front of the PAGE READ CACHE RANDOM (00h-31h) command.
To begin a two-plane read page cache sequence, begin by issuing a READ PAGE TWO-
PLANE operation using the READ PAGE TWO-PLANE (00h-00h-30h) and READ PAGE
(00h-30h) commands. R/B# goes LOW during
(RDY = 0, ARDY = 0). After
these commands:
• READ PAGE CACHE SEQUENTIAL (31h) – copies the next sequential pages from the
• READ PAGE TWO-PLANE (00h-00h-30h) [in some cases, followed by READ PAGE
After the READ PAGE CACHE series (31h, 00h-31h) command has been issued, R/B#
goes LOW on the target, and RDY = 0 and ARDY = 0 on the die (LUN) for
the next pages begin copying data from the array to the data registers. After
R/B# goes HIGH and the LUN’s status register bits indicate the device is busy with a
cache operation (RDY = 1, ARDY = 0). The cache registers become available and the pa-
ges requested in the READ PAGE CACHE operation are transferred to the data registers.
Issue the RANDOM DATA READ TWO-PLANE (06h-E0h) command to determine which
cache register will output data. After data is output, the RANDOM DATA READ TWO-
PLANE (06h-E0h) command can be used to output data from other cache registers.
After a cache register has been selected, the RANDOM DATA READ (05h-E0h) com-
mand can be used to change the column address of the data output.
After outputting data from the cache registers, either an additional TWO-PLANE READ
CACHE series (31h, 00h-31h) operation can be started or the READ PAGE CACHE LAST
(3Fh) command can be issued.
If the READ PAGE CACHE LAST (3Fh) command is issued, R/B# goes LOW on the tar-
get, and RDY = 0 and ARDY = 0 on the die (LUN) for
copied into the cache registers. After
1, indicating that the cache registers are available and that the die (LUN) is ready. Issue
the RANDOM DATA READ TWO-PLANE (06h-E0h) command to determine which
cache register will output data. After data is output, the RANDOM DATA READ TWO-
PLANE (06h-E0h) command can be used to output data from other cache registers.
After a cache register has been selected, the RANDOM DATA READ (05h-E0h) com-
mand can be used to change the column address of the data output.
previously addressed planes from the NAND Flash array to the data registers.
CACHE RANDOM (00h-31h)] – copies the pages specified from the NAND Flash array
to the corresponding data registers.
t
R (R/B# is HIGH and RDY = 1, ARDY = 1), issue either of
62
4Gb, 8Gb: x8, x16 NAND Flash Memory
t
RCBSY, R/B# goes HIGH and RDY = 1 and ARDY =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
R and the selected die (LUN) is busy
t
RCBSY while the data registers are
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Read Operations
t
RCBSY while
t
RCBSY,