MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 33

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 8: Two-Plane Command Set (Continued)
Note 4 applies to all parameters and conditions
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Command
PROGRAM PAGE
TWO-PLANE
PROGRAM PAGE
CACHE MODE TWO-
PLANE
PROGRAM FOR TWO-
PLANE INTERNAL DA-
TA MOVE
BLOCK ERASE TWO-
PLANE
Notes:
Cycle #1
mand
Com-
80h
80h
85h
60h
1. Do not cross plane boundaries when using READ FOR INTERNAL DATA MOVE TWO-
2. The RANDOM DATA READ TWO-PLANE command is limited to use with the PAGE READ
3. D1h command can be omitted.
4. These commands supported only with ECC disabled.
PLANE or PROGRAM FOR TWO-PLANE INTERNAL DATA MOVE.
TWO-PLANE command.
Number of
Address
Cycles
Valid
5
5
5
3
Cycle #2
D1h-60h
11h-80h
11h-80h
11h-85h
mand
Com-
33
Number of
Address
Cycles
Valid
4Gb, 8Gb: x8, x16 NAND Flash Memory
5
5
5
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Cycle #3
mand
Com-
D0h
10h
15h
10h
Valid While
LUN is Busy
Selected
Command Definitions
No
No
No
No
© 2009 Micron Technology, Inc. All rights reserved.
Valid While
Other LUNs
are Busy
Yes
Yes
Yes
Yes
Notes
1
3