MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 78

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Internal Data Move Operations
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Internal data move operations make it possible to transfer data within a device from
one page to another using the cache register. This is particularly useful for block man-
agement and wear leveling.
The INTERNAL DATA MOVE operation is a two-step process consisting of a READ FOR
INTERNAL DATA MOVE (00h-35h) and a PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command. To move data from one page to another on the same plane, first
issue the READ FOR INTERNAL DATA MOVE (00h-35h) command. When the die (LUN)
is ready (RDY = 1, ARDY = 1), the host can transfer the data to a new page by issuing the
PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command. When the die (LUN) is
again ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that this
operation completed successfully.
To prevent bit errors from accumulating over multiple INTERNAL DATA MOVE opera-
tions, it is recommended that the host read the data out of the cache register after the
READ FOR INTERNAL DATA MOVE (00h-35h) completes and prior to issuing the PRO-
GRAM FOR INTERNAL DATA MOVE (85h-10h) command. The RANDOM DATA READ
(05h-E0h) command can be used to change the column address. The host should check
the data for ECC errors and correct them. When the PROGRAM FOR INTERNAL DATA
MOVE (85h-10h) command is issued, any corrected data can be input. The PROGRAM
FOR INTERNAL DATA INPUT (85h) command can be used to change the column address.
It is not possible to use the READ FOR INTERNAL DATA MOVE operation to move data
from one plane to another or from one die (LUN) to another. Instead, use a READ PAGE
(00h-30h) or READ FOR INTERNAL DATA MOVE (00h-35h) command to read the data
out of the NAND, and then use a PROGRAM PAGE (80h-10h) command with data input
to program the data to a new plane or die (LUN).
Between the READ FOR INTERNAL DATA MOVE (00h-35h) and PROGRAM FOR INTER-
NAL DATA MOVE (85h-10h) commands, the following commands are supported: status
operations (70h, 78h) and column address operations (05h-E0h, 06h-E0h, 85h). The RE-
SET operation (FFh) can be issued after READ FOR INTERNAL DATA MOVE (00h-35h),
but the contents of the cache registers on the target are not valid.
In devices that have more than one die (LUN) per target, once the READ FOR INTER-
NAL DATA MOVE (00h-35h) is issued, interleaved die (multi-LUN) operations are pro-
hibited until after the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is
issued.
Two-Plane Read for Internal Data Move Operations
Two-plane internal data move read operations improve read data throughput by copy-
ing data simultaneously from more than one plane to the specified cache registers. This
is done by issuing the READ PAGE TWO-PLANE (00h-00h-30h) command or the READ
FOR INTERNAL DATA MOVE (00h-00h-35h) command.
The INTERNAL DATA MOVE PROGRAM TWO-PLANE (85h-11h) command can be used
to further system performance of PROGRAM FOR INTERNAL DATA MOVE operations
by enabling movement of multiple pages from the cache registers to different planes of
the NAND Flash array. This is done by prepending one or more PROGRAM FOR INTER-
NAL DATA MOVE (85h-11h) commands in front of the PROGRAM FOR INTERNAL
DATA MOVE (85h-10h) command. See Two-Plane Operations for details.
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4Gb, 8Gb: x8, x16 NAND Flash Memory
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Internal Data Move Operations
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