MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 129

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled
Figure 100: ERASE BLOCK Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
I/O[7:0]
I/O[7:0]
R/B#
WE#
RDY
CLE
ALE
CE#
RE#
00h
Source address
(5 cycles)
Address
t
WC
60h
add 1
35h
Row
Row address
t
R_ECC
add 2
Row
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
add 3
Row
Status
00h
D0h
t
WB
D
D
OUT
OUT
129
Busy
t
BERS
Asynchronous Interface Timing Diagrams
is optional
4Gb, 8Gb: x8, x16 NAND Flash Memory
85h
Destination address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
READ STATUS
Address
command
70h
Data
(Unlimitted repetitions are possible)
t
WHR
85h
Column address 1, 2
I/O0 = 0, Pass
I/O0 = 1, Fail
(2 cycles)
Address
Status
© 2009 Micron Technology, Inc. All rights reserved.
Data
10h
t
PROG_ECC
Don’t Care
70h