MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 111

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Notes:
Note:
Table 25: Capacitance
Notes 1–3 apply to all parameters and conditions
Table 26: Test Conditions
Description
Input capacitance
Input/output capacitance (I/O)
Parameter
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
Output load
1. These parameters are verified in device characterization and are not 100% tested.
2. Test conditions: T
3. Capacitance (C
1. Verified in device characterization, not 100% tested.
IN
= C
C
= 25°C; f = 1 MHz; V
IO
= 20pF) for MT29F8G.
111
1.8V
3.3V
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
IN
1 TTL GATE and CL = 30pF (1.8V)
1 TTL GATE and CL = 50pF (3.3V)
1 TTL GATE and CL = 30pF (1.8V)
1 TTL GATE and CL = 50pF (3.3V)
Symbol
= 0V.
C
C
IO
IN
0.0V to V
Value
V
Electrical Specifications
2.5ns
5.0ns
CC
/2
CC
Max
© 2009 Micron Technology, Inc. All rights reserved.
10
10
Unit
pF
pF
Notes
1
1