MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 116

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 32: AC Characteristics: Normal Operation (1.8V) (Continued)
Note 1 applies to all
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Parameter
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Notes:
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
sampled and not 100% tested.
be busy for a maximum of 1ms. Thereafter, the device is busy for a maximum of 5µs.
Electrical Specifications – AC Characteristics and Operating
Symbol
t
t
RLOH
t
WHR
t
t
RHZ
t
t
RST
WB
RP
RR
116
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
12
20
80
3
–
–
–
5/10/500
Max
100
65
–
–
–
–
© 2009 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
µs
ns
ns
Conditions
Notes
2
3