MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 15

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Architecture
Figure 8: NAND Flash Die (LUN) Functional Block Diagram
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
LOCK
WE#
WP#
R/B#
I/Ox
ALE
CE#
RE#
CLE
1
Note:
Control
control
logic
These devices use NAND Flash electrical and command interfaces. Data, commands,
and addresses are multiplexed onto the same pins and received by I/O control circuits.
The commands received at the I/O control circuits are latched by a command register
and are transferred to control logic circuits for generating internal signals to control de-
vice operations. The addresses are latched by an address register and sent to a row
decoder to select a row address, or to a column decoder to select a column address.
Data is transferred to or from the NAND Flash memory array, byte by byte (x8) or word
by word (x16), through a data register and a cache register.
The NAND Flash memory array is programmed and read using page-based operations
and is erased using block-based operations. During normal page operations, the data
and cache registers act as a single register. During cache operations, the data and cache
registers operate independently to increase data throughput. The status register reports
the status of die operations.
I/O
1. The LOCK pin is used on the 1.8V device.
Command register
Address register
Status register
15
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Column decode
Cache register
NAND Flash
Data register
(2 planes)
array
© 2009 Micron Technology, Inc. All rights reserved.
ECC
V
CC
Architecture
V
SS