MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 87

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MT29F4G08ABADAWP:D

Manufacturer Part Number
MT29F4G08ABADAWP:D
Description
MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F4G08ABADAWP:D

Lead Free Status / Rohs Status
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Figure 62: PROGRAM/ERASE Issued to Locked Block
BLOCK LOCK READ STATUS (7Ah)
Table 20: Block Lock Status Register Bit Definitions
Figure 63: BLOCK LOCK READ STATUS
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Block Lock Status Register Definitions
Block is locked tight
Block is locked
Block is unlocked, and device is locked tight
Block is unlocked, and device is not locked tight
R/B#
I/Ox
PROGRAM or ERASE
The BLOCK LOCK READ STATUS (7Ah) command is used to determine the protection
status of individual blocks. The address cycles have the same format, as shown below,
and the invert area bit should be set LOW. On the falling edge of RE# the I/O pins out-
put the block lock status register, which contains the information on the protection
status of the block.
WE#
I/Ox
ALE
CE#
RE#
CLE
Address/data input
Locked block
READ STATUS
BLOCK LOCK
7Ah
Add 1 Add 2 Add 3
I/O[7:3]
Block address
X
X
X
X
87
CONFIRM
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/O2 (Lock#)
0
0
1
1
t WHR
t
LBSY
I/O1 (LT#)
Status
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
0
1
0
1
READ STATUS
70h
I/O0 (LT)
60h
1
0
1
0

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