MT29F4G08ABADAWP:D Micron Technology Inc, MT29F4G08ABADAWP:D Datasheet - Page 76

• Manufacturer Part Number: MT29F4G08ABADAWP:D
• Description: MICMT29F4G08ABADAWP:D 4GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F4G08ABADAWP:D

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Erase Operations
ERASE BLOCK (60h-D0h)
Figure 48: ERASE BLOCK (60h-D0h) Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. G 11/10 EN
Erase operations are used to clear the contents of a block in the NAND Flash array to
prepare its pages for program operations.
Erase Operations
The ERASE BLOCK (60h-D0h) command, when not preceded by the ERASE BLOCK TWO-
PLANE (60h-D1h) command, erases one block in the NAND Flash array. When the die
(LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that this
operation completed successfully.
TWO-PLANE ERASE Operations
The ERASE BLOCK TWO-PLANE (60h-D1h) command can be used to further system
performance of erase operations by allowing more than one block to be erased in the
NAND array. This is done by prepending one or more ERASE BLOCK TWO-PLANE (60h-
D1h) commands in front of the ERASE BLOCK (60h-D0h) command. See Two-Plane
Operations for details.
The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flash
array. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write three address cycles
containing the row address; the page address is ignored. Conclude by writing D0h to
the command register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for
t
To determine the progress of an ERASE operation, the host can monitor the target's R/
B# signal, or alternatively, the status operations (70h, 78h) can be used. When the die
(LUN) is ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.
In devices that have more than one die (LUN) per target, during and following inter-
leaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select only one die (LUN) for status output. Use of the READ STATUS
(70h) command could cause more than one die (LUN) to respond, resulting in bus con-
tention.
The ERASE BLOCK (60h-D0h) command is used as the final command of an erase two-
plane operation. It is preceded by one or more ERASE BLOCK TWO-PLANE (60h-D1h)
commands. All blocks in the addressed planes are erased. The host should check the
status of the operation by using the status operations (70h, 78h). See Two-Plane Opera-
tions for two-plane addressing requirements.
Cycle type
BERS while the block is erased.
I/O[7:0]
RDY
Command
60h
Address
R1
76
Address
4Gb, 8Gb: x8, x16 NAND Flash Memory
R2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Address
R3
Command
D0h
t WB
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Erase Operations
t BERS