EP1S20F780I6N Altera, EP1S20F780I6N Datasheet - Page 400
![IC STRATIX FPGA 20K LE 780-FBGA](/photos/6/72/67270/544-780-fbga_sml.jpg)
EP1S20F780I6N
Manufacturer Part Number
EP1S20F780I6N
Description
IC STRATIX FPGA 20K LE 780-FBGA
Manufacturer
Altera
Series
Stratix®r
Specifications of EP1S20F780I6N
Number Of Logic Elements/cells
18460
Number Of Labs/clbs
1846
Total Ram Bits
1669248
Number Of I /o
586
Voltage - Supply
1.425 V ~ 1.575 V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Package / Case
780-FBGA
Family Name
Stratix
Number Of Logic Blocks/elements
18460
# I/os (max)
586
Frequency (max)
450.05MHz
Process Technology
0.13um (CMOS)
Operating Supply Voltage (typ)
1.5V
Logic Cells
18460
Ram Bits
1669248
Operating Supply Voltage (min)
1.425V
Operating Supply Voltage (max)
1.575V
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
780
Package Type
FC-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Gates
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EP1S20F780I6N
Manufacturer:
ALTERA
Quantity:
3 000
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- Download datasheet (11Mb)
External Memory Standards
Figure 3–3. DDR SDRAM Interfacing
3–4
Stratix Device Handbook, Volume 2
PLL
OE
− 90˚
Registers
f
f
DDR
OE
User logic/
GND
Figure 3–3
dedicated circuitry to the logic array. When the DQS pin acts as an input
strobe, the dedicated circuitry shifts the incoming DQS pin by either 72°
or 90° and clocks the DDR input registers. Because of the DDR input
registers architecture in Stratix and Stratix GX devices, the shifted DQS
signal must be inverted. The DDR registers outputs are sent to two LE
registers to be synchronized with the system clock.
Refer to the DC & Switching Characteristics chapter in volume 1 of the
Stratix Device Handbook for frequency limits regarding the 72 and 90°
phase shift for DQS.
For more information on DDR SDRAM specifications, see JEDEC
standard publications JESD79C from www.jedec.org, or see
AN 342: Interfacing DDR SDRAM with Stratix & Stratix GX Devices.
RLDRAM II
RLDRAM II provides fast random access as well as high bandwidth and
high density, making this memory technology ideal for high-speed
network and communication data storage applications. The fast random
access speeds in RLDRAM II devices make them a viable alternative to
SRAM devices at a lower cost. Additionally, RLDRAM II devices have
minimal latency to support designs that require fast response times.
2
Registers
Output
DDR
DQS
shows DDR SDRAM interfacing from the I/O through the
Δ t
Compensated
Delay Shift
OE
DQS Bus
Registers
DDR
OE
Resynchronizing
Global Clock
2
Registers
Output
DDR
DQ
Adjacent LAB LEs
Registers
Register
Register
DDR
Input
LE
LE
Altera Corporation
2
I/O Elements &
Periphery
June 2006
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