ATTINY43U-MU Atmel, ATTINY43U-MU Datasheet - Page 155

• Manufacturer Part Number: ATTINY43U-MU
• Description: MCU AVR 4K FLASH 8MHZ 20-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY43U-MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-MLF®, QFN
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• For Use With: ATSTK600-TINYX3U - STK600 SOCKET/ADAPTER TINYX3U
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20. Electrical Characteristics
20.1
20.2
Note:
Table 20-1.
8048B–AVR–03/09
Operating Temperature.................................. -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on any Pin except RESET
with respect to Ground ................................-0.5V to V
Voltage on RESET with respect to Ground......-0.5V to +13.0V
Maximum Operating Voltage ............................................ 6.0V
DC Current per I/O Pin ............................................... 40.0 mA
DC Current
Symbol
V
V
V
I
V
I
LIH
LIL
OH
OL
IH
IL
Absolute Maximum Ratings*
DC Characteristics
All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcontrollers
manufactured in the same process technology. These values are preliminary values representing design targets, and will be
updated after characterization of actual silicon.
Parameter
Input Low Voltage,
Any Pin as I/O
Input Low Voltage,
RESET Pin as Reset
Input High-voltage,
Any Pin as I/O
Input High-voltage,
RESET Pin as Reset
Output Low Voltage
Pins PB1, PB2, PB4 and PB5
Output Low Voltage
All Other I/O Pins, except RESET
pin
Output High-voltage
All I/O Pins, except RESET pin
Input Leakage Current, I/O Pin
Input Leakage Current, I/O Pin
V
CC
DC Characteristics. T
and GND Pins................................ 200.0 mA
(4)
(4)
(6)
(2)
(2)
,
,
A
= -40°C to 85°C
(5)
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
V
V
Condition
OL
OL
OL
OL
OL
OL
OH
OH
OH
CC
CC
CC
CC
CC
CC
CC
CC
= 20 mA, V
= 10 mA, V
= 4 mA, V
= 10 mA, V
= 5 mA, V
= 2 mA, V
= 10 mA, V
= 5 mA, V
= 2 mA, V
= 1.8V - 2.4V
= 2.4V - 5.5V
= 1.8V - 5.5V
= 1.8V - 2.4V
= 2.4V - 5.5V
=
=
CC
= 1.8V to 5.5V
5.5
5.5
+0.5V
V, pin low
V, pin high
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 1.8V
= 3V
= 1.8V
= 3V
= 1.8V
= 5V
= 3V
= 5V
= 5V
*NOTICE:
0.9 V
0.7V
0.6V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Min.
-0.5
-0.5
-0.5
4.0
2.3
1.4
-1
-1
CC
CC
CC
(3)
(3)
(3)
Typ.
0.2V
0.3V
0.2V
V
V
V
CC
CC
CC
Max.
0.8
0.8
0.8
0.8
0.8
0.8
1
1
CC
CC
CC
+0.5
+0.5
+0.5
(1)
(1)
(1)
Units
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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