ATTINY43U-MU Atmel, ATTINY43U-MU Datasheet - Page 16

MCU AVR 4K FLASH 8MHZ 20-QFN

ATTINY43U-MU

Manufacturer Part Number
ATTINY43U-MU
Description
MCU AVR 4K FLASH 8MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY43U-MU

Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
16
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY4x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
ATSTK600-TINYX3U - STK600 SOCKET/ADAPTER TINYX3U
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
5.3.1
5.4
16
EEPROM Data Memory
ATtiny43U
Data Memory Access Times
The direct addressing reaches the entire data space.
The Indirect with Displacement mode reaches 63 address locations from the base address given
by the Y- or Z-register.
When using register indirect addressing modes with automatic pre-decrement and post-incre-
ment, the address registers X, Y, and Z are decremented or incremented.
The 32 general purpose working registers, 64 I/O Registers, and the 256 bytes of internal data
SRAM in ATtiny43U are all accessible through all these addressing modes. The Register File is
described in
Figure 5-2.
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
16.
Figure 5-3.
The ATtiny43U contains 64 bytes of data EEPROM memory. It is organized as a separate data
space, in which single bytes can be read and written. The EEPROM has an endurance of at
least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described
in the following, specifying the EEPROM Address Registers, the EEPROM Data Register, and
“General Purpose Register File” on page
Data Memory Map
On-chip Data SRAM Access Cycles
Address
clk
Data
Data
WR
CPU
RD
Compute Address
64 I/O Registers
Data Memory
Internal SRAM
32 Registers
(256 x 8)
T1
Memory Access Instruction
Address valid
0x15F
0x0000 - 0x001F
0x0020 - 0x005F
0x0060
CPU
T2
cycles as described in
10.
Next Instruction
T3
Figure 5-3 on page
8048B–AVR–03/09

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