HD64F2636UF20 Renesas Electronics America, HD64F2636UF20 Datasheet - Page 821

• Manufacturer Part Number: HD64F2636UF20
• Description: IC H8S MCU FLASH 128K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2636UF20

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
21A.9
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes for on-chip flash
memory are made by setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program
(user program) that controls flash memory programming/erasing should be located and executed in
on-chip RAM or external memory. If the program is to be located in external memory, the
instruction for writing to flash memory, and the following instruction, should be placed in on-chip
RAM. Also ensure that the DTC is not activated before or after execution of the flash memory
write instruction.
In the following operation descriptions, wait times after setting or clearing individual bits in
FLMCR1 are given as parameters; for details of the wait times, see section 24.1.7, Flash Memory
Characteristics.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
REJ09B0103-0800 Rev. 8.00
May 28, 2010
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming must be executed in the erased state. Do not perform additional
P bits in FLMCR1 is executed by a program in flash memory.
executed if FWE = 0).
programming on addresses that have already been programmed.
Flash Memory Programming/Erasing
Section 21A ROM
(H8S/2636 Group)
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