MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 13

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Figure 4: 128 Meg x 8 Functional Block Diagram
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
BA0–BA2
A0–A13,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
17
Address
register
registers
Mode
Control
logic
17
Refresh
counter
14
10
3
14
address
2
Row-
MUX
14
control
Bank
Column-
logic
counter/
address
latch
decoder
address
Bank 0
latch
row-
and
Bank 1
Bank 2
Bank 3
8
2
Bank 4
16,384
Bank 5
Bank 6
Bank 7
DM mask logic
(16,384 x 256 x 32)
I/O gating
Memory array
Sense amplifers
decoder
Column
8,192
(x32)
256
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
13
Bank 7
COL0, COL1
CK,CK#
32
32
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Read
latch
CK out
drivers
WRITE
CK in
FIFO
and
8
8
8
8
Mask
COL0, COL1
Data
4
32
1Gb: x4, x8, x16 DDR2 SDRAM
MUX
generator
2
2
2
8
8
8
8
2
DQS
registers
Input
Functional Block Diagrams
Data
8
UDQS, UDQS#
LDQS, LDQS#
2
2
2
2
8
8
8
8
CK, CK#
2
8
2
DRVRS
2
DLL
RCVRS
© 2004 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
V
ss
Q
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
dd
Q
DQ0–DQ7
DQS, DQS#
RDQS#
RDQS
DM