MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 14

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Figure 5: 64 Meg x 16 Functional Block Diagram
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
BA0–BA2
A0–A12,
RAS#
CAS#
WE#
ODT
CKE
CK#
CS#
CK
16
Address
register
registers
Mode
Control
logic
16
Refresh
counter
13
10
3
13
address
2
Row-
MUX
13
control
Bank
logic
Column-
counter/
address
latch
decoder
address
Bank 0
row-
latch
and
Bank 1
Bank 2
Bank 3
Bank 4
8
2
8,192
Bank 5
Bank 6
Bank 7
DM mask logic
(8,192 x 256 x 64)
I/O gating
Memory array
Sense amplifier
decoder
Column
16,384
(x64)
256
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
Bank 7
14
COL0, COL1
CK, CK#
64
64
64
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Read
latch
CK out
WRITE
drivers
CK in
FIFO
and
16
16
16
16
Mask
Data
COL0, COL1
8
64
MUX
1Gb: x4, x8, x16 DDR2 SDRAM
generator
2
2
2
16
16
16
16
2
DQS
registers
Input
DATA
Functional Block Diagrams
16
UDQS, UDQS#
LDQS, LDQS#
2
2
2
2
16
16
16
16
4
16
CK, CK#
2
DRVRS
4
DLL
RCVRS
© 2004 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
V
ss
Q
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
dd
Q
DQ0–DQ15
UDQS, UDQS#
LDQS, LDQS#
UDM, LDM