MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 46

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Output Electrical Characteristics and Operating Conditions
Table 17: Differential AC Output Parameters
Figure 14: Differential Output Signal Levels
Table 18: Output DC Current Drive
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
AC differential cross-point voltage
AC differential voltage swing
Parameter
Output MIN source DC current
Output MIN sink DC current
Notes:
Note:
V
V
TR
CP
1. The typical value of V
1. For I
2. For I
3. The DC value of V
4. The values of I
vice and V
which differential output signals must cross.
values of V
between 0V and 280mV.
are used to test device drive current capability to ensure V
V
ues are derived by shifting the desired driver operating point (see output IV curves)
along a 21Ω load line to define a convenient driver current for measurement.
IL,max
Output Electrical Characteristics and Operating Conditions
OH(DC)
OL(DC)
minus a noise margin are delivered to an SSTL_18 receiver. The actual current val-
; V
; V
OX(AC)
OUT
V
V
DDQ
DDQ
DDQ
Symbol
SSQ
Vswing
V
Vswing
OH(DC)
between V
OX(AC)
is expected to track variations in V
= 1.7V, V
= 1.7V, V
REF
and I
applied to the receiving device is set to V
OX(AC)
OUT
OL(DC)
OUT
DDQ
46
0.50 × V
is expected to be about 0.5 × V
= 280mV. V
= 1,420mV. (V
Crossing point
and V
are based on the conditions given in Notes 1 and 2. They
Min
Symbol
1.0
DDQ
V
I
I
DDQ
OH
OX
OL
Micron Technology, Inc. reserves the right to change products or specifications without notice.
- 125
- 280mV.
OUT
OUT
/I
1Gb: x4, x8, x16 DDR2 SDRAM
OL
- V
must be less than 21Ω for values of V
0.50 × V
Value
DDQ
–13.4
DDQ
13.4
)/I
. V
OH
Max
OX(AC)
DDQ
–
IH,min
DDQ
must be less than 21Ω for
© 2004 Micron Technology, Inc. All rights reserved.
+ 125
TT
of the transmitting de-
indicates the voltage at
plus a noise margin and
.
Units
mA
mA
Units
mV
mV
Notes
1, 2, 4
2, 3, 4
Notes
1
OUT