MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 23

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
balls not under test = 0V
Output leakage current; 0V ≤ V
abled
V
DD
DDQ
DDL
REF
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= Valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 24), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 25) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08,
listed in Table 7. For designs that are expected to last several years and require the flexi-
bility to use several DRAM die shrinks, consider using final target theta values (rather
than existing values) to account for increased thermal impedances from the die size re-
duction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
≤ V
DD
REF
specification is not exceeded. In applications where the device’s ambient temper-
REF
, V
DDQ
≤ 0.6 × V
level
IN
DDQ
≤ V
; DQ and ODT dis-
, and V
DD
; all other
DDQ
DDL
; however, V
“Thermal Applications”
must be within 300mV of each other at all times; this is not re-
Electrical Specifications – Absolute Ratings
23
V
Symbol
REF
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
DD
I
may be ≥ V
I
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
prior to using the thermal impedances
Min
–1.0
–0.5
–0.5
–0.5
DDQ
1Gb: x4, x8, x16 DDR2 SDRAM
–5
–5
–2
provided that V
DDQ
.
Max
2.3
2.3
2.3
2.3
5
5
2
© 2004 Micron Technology, Inc. All rights reserved.
REF
≤ 300mV.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3