MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 34

IC DDR2 SDRAM 1GBIT 5NS 92FBGA

MT47H256M4BT-5E:A TR

Manufacturer Part Number
MT47H256M4BT-5E:A TR
Description
IC DDR2 SDRAM 1GBIT 5NS 92FBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT47H256M4BT-5E:A TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
92-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1206-1
Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
Input setup time
Input hold time
Input setup time
Input hold time
Input pulse width
ACTIVATE-to-
ACTIVATE delay,
same bank
ACTIVATE-to-READ
or WRITE delay
ACTIVATE-to-
PRECHARGE delay
PRECHARGE period
PRE-
CHARGE
ALL period
ACTIVATE
-to-
ACTIVATE
delay
different
bank
4-bank
activate
period
(≥1Gb)
= +1.8V ±0.1V, V
Parameter
AC Characteristics
x4, x8
x4, x8
<1Gb
≥1Gb
x16
x16
DD
Symbol
= +1.8V ±0.1V
t
t
t
t
t
t
t
t
t
t
FAW
FAW
t
t
t
RCD
RPA
RPA
RRD
RRD
IPW
t
RAS
t
IHb
IHa
ISb
ISa
RC
RP
13.125
13.125
13.125
Min
125
200
325
325
0.6
7.5
54
40
15
10
35
45
-187E
Max
70K
Min
12.5
12.5
12.5
175
250
375
375
0.6
7.5
55
40
15
10
35
45
-25E
Max
70K
Min
17.5
175
250
375
375
0.6
7.5
55
15
40
15
15
10
35
45
-25
Max
70K
Min
37.5
200
275
400
400
0.6
7.5
54
12
40
12
12
15
10
50
-3E
Max
70K
Min
37.5
200
275
400
400
0.6
7.5
55
15
40
15
15
18
10
50
-3
Max
70K
18.75
Min
37.5
250
375
500
500
0.6
7.5
55
15
40
15
15
10
50
-37E
Max
70K
Min
37.5
350
475
600
600
0.6
7.5
55
15
40
15
15
20
10
50
-5E
Max
70K
Units Notes
t
ps
ps
ps
ps
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
18, 34,
31, 33
31, 33
31, 33
31, 33
18, 32
18, 34
18, 36
18, 36
18, 36
18, 37
18, 37
18, 38
18, 38
18
35

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