MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 25

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Table 7: Thermal Impedance
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Die Revision
G
H
1
1
Package
60-ball
84-ball
60-ball
84-ball
Note:
Substrate
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
(pcb)
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
66.5
49.2
60.2
72.5
54.5
68.8
51.3
44
Electrical Specifications – Absolute Ratings
Airflow = 1m/s
25
θ JA (°C/W)
49.6
40.4
44.5
35.7
55.5
45.7
52.0
42.7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Airflow = 2m/s
1Gb: x4, x8, x16 DDR2 SDRAM
θ JA (°C/W)
43.1
36.4
39.3
32.8
49.5
42.3
46.5
39.6
© 2004 Micron Technology, Inc. All rights reserved.
θ JB (°C/W) θ JC (°C/W)
30.3
26.1
26.1
35.6
35.2
32.5
32.3
30
5.9
5.6
5.7
5.6