MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 59

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

Figure 25: Nominal Slew Rate for
Figure 26: Tangent Line for
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
REF(DC)
V
V
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
CK#
DDQ
REF(DC)
V
CK
V
t
SS
CK#
IH
DDQ
V
CK
SS
=
DC to V
DC to V
Tangent line (V
region
t
region
IH
REF
REF
REF[DC]
Nominal
slew rate
ΔTR
t IS
t IS
Tangent
line
- V
IL[DC]max
t IH
t IH
59
)
ΔTR
Hold slew rate
falling signal
ΔTR
Nominal
line
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=
Tangent line (V
t IS
Nominal
slew rate
Tangent
DC to V
DC to V
t IS
line
region
region
1Gb: x4, x8, x16 DDR2 SDRAM
t IH
REF
REF
t IH
IH[DC]min
ΔTF
ΔTF
Nominal
Input Slew Rate Derating
line
ΔTF
- V
REF[DC]
)
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