MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 22

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE,
ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, V
OUT(DC)
= V
22
DDQ
DD
= +1.8V ±0.1V, V
/2, V
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(peak-to-peak) = 0.1V. DM input is grouped
1Gb: x4, x8, x16 DDR2 SDRAM
DDQ
= +1.8V ±0.1V, V
Symbol Min Max Units Notes
C
C
C
C
C
DCK
C
DIO
CK
IO
DI
I
© 2004 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
REF
0.25
0.25
2.0
2.0
4.0
0.5
= V
Packaging
SS
pF
pF
pF
pF
pF
pF
, f = 100
2, 3
1, 4
2, 3
1, 5
2, 3
1