MT47H256M4BT-5E:A TR Micron Technology Inc, MT47H256M4BT-5E:A TR Datasheet - Page 86

• Manufacturer Part Number: MT47H256M4BT-5E:A TR
• Description: IC DDR2 SDRAM 1GBIT 5NS 92FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H256M4BT-5E:A TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 92-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1206-1

PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Notes:
1. Applying power; if CKE is maintained below 0.2 × V
2. CKE requires LVCMOS input levels prior to state T0 to ensure DQs are High-Z during de-
3. For a minimum of 200µs after stable power and clock (CK, CK#), apply NOP or DESELECT
4. Wait a minimum of 400ns then issue a PRECHARGE ALL command.
5. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2) command, provide
6. Issue a LOAD MODE command to the EMR(3). To issue an EMR(3) command, provide
7. Issue a LOAD MODE command to the EMR to enable DLL. To issue a DLL ENABLE com-
8. Issue a LOAD MODE command to the MR for DLL RESET. 200 cycles of clock input is re-
9. Issue PRECHARGE ALL command.
guarantee R
to the ODT ball (all other inputs may be undefined; I/Os and outputs must be less than
V
plied directly to the device; however,
least one of the following two sets of conditions (A or B) must be met to obtain a stable
supply state (stable supply defined as V
minimum and maximum values as stated in Table 12 (page 41)):
A. Single power source: The V
ger than 200ms; during the V
ramping is complete (when V
• V
• V
• V
• V
B. Multiple power sources: V
ramping, for both AC and DC levels, until supply voltage ramping completes (V
crosses V
• Apply V
• Apply V
• V
• Apply V
vice power-up prior to V
input levels. Once CKE transitions to a high level, it must stay HIGH for the duration of
the initialization sequence.
commands, then take CKE HIGH.
LOW to BA0, and provide HIGH to BA1; set register E7 to “0” or “1” to select appropri-
ate self refresh rate; remaining EMR(2) bits must be “0” (see Extended Mode Register 2
(EMR2) (page 83) for all EMR(2) requirements).
HIGH to BA0 and BA1; remaining EMR(3) bits must be “0.” Extended Mode Register 3
(EMR3) for all EMR(3) requirements.
mand, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set
to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be
“0.” Extended Mode Register (EMR) (page 79) for all EMR requirements.
quired to lock the DLL. To issue a DLL RESET, provide HIGH to A8 and provide LOW to
BA1 and BA0; CKE must be HIGH the entire time the DLL is resetting; remaining MR bits
must be “0.” Mode Register (MR) (page 74) for all MR requirements.
DDQ
ramp time; does not need to be satisfied when ramping power down
must be ≤ 200ms from when V
V
ing, current can be supplied from V
ply ramp time; V
when ramping power down
is achieved must be no greater than 500ms
DD
TT
REF
DDQ
DD,min
REF
during voltage ramp time to avoid DDR2 SDRAM device latch-up). V
, V
is limited to 0.95V MAX
tracks V
must track V
≥ V
DDL
DD,min
is achieved to when V
DD
DDQ
TT
REF
, and V
; the V
TT
and V
before or at the same time as V
at all times
). Once supply voltage ramping is complete, Table 12 specifications apply.
(ODT resistance) is off, V
DDQ
/2; V
TT
DDQ
DDL
DDQ
DDQ
voltage ramp time from when V
before or at the same time as V
REF
are driven from a single power converter output
/2; V
≥ V
REF
86
must be within ±0.3V with respect to V
REF
REF
being stable. After state T0, CKE is required to have SSTL_18
DD
DD
DDQ
must be met at all times; does not need to be satisfied
DD
must be within ±0.3V with respect to V
≥ V
DDQ,min
voltage ramp, |V
DD
voltage ramp from 300mV to V
crosses V
DDL
ramps from 300mV to V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
t
VTD should be ≥0 to avoid device latch-up. At
≥ V
REF
DD
is achieved must be ≤ 500ms; while V
through the device to V
, V
DDQ
DD,min
must be valid and a low level must be applied
DDL
1Gb: x4, x8, x16 DDR2 SDRAM
TT
must be maintained during supply voltage
, V
; the V
), Table 12 specifications apply.
DD
DDQ
DDQ
- V
DDQ,min
, V
DDQ
DDQ
DDQ
, outputs remain disabled. To
REF
; V
| ≤ 0.3V. Once supply voltage
voltage ramp time from when
, and V
DD,min
DD
is achieved to when V
© 2004 Micron Technology, Inc. All rights reserved.
/V
DD,min
DDQ
DDL
DDQ
TT
are between their
voltage ramp time
/2 during supply
DDQ
must take no lon-
/2 during sup-
TT
is not ap-
DD
DDQ
is ramp-
TT,min