MCHC908GR8CFAE Freescale Semiconductor, MCHC908GR8CFAE Datasheet - Page 161

• Manufacturer Part Number: MCHC908GR8CFAE
• Description: IC MCU FLSH 8BIT8MHZ 7.5K32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCHC908GR8CFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 7.5KB (7.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 384Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08G
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8.2 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 3
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 6 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

11.6 FLASH Mass Erase Operation
MC68HC908GR8 — Rev 4.0
MOTOROLA
NOTE:
Use this step-by-step procedure to erase entire FLASH memory to read
as logic 1:
* When in Monitor mode, with security sequence failed
block protect register instead of any FLASH address.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
10. After a time, t
1. Set both the ERASE bit, and the MASS bit in the FLASH control
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address* within the FLASH memory
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
register.
address range.
read mode.
Go to: www.freescale.com
Flash Memory
rcv
(min. 1 s), the memory can be accessed again in
nvs
MErase
nvhl
(min. 10 s)
(min. 100 s)
(min. 4ms)
Monitor ROM
FLASH Mass Erase Operation
(MON), write to the FLASH
Technical Data
Flash Memory
161