M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 15

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

2.7
2.8
Write Enable (W)
The Write Enable, W, controls the bus write operation of the memory’s command interface.
V
The V
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function performs hardware protection:
The V
characteristics).
When V
M29W640GL, respectively, and the last or first two blocks in the M29W640GT and
M29W640GB, respectively, are protected. Program and erase operations in this block are
ignored while V
When V
of the outermost blocks. Program and erase operations can now modify the data in the
outermost blocks unless the block is protected using block protection.
Applying 12 V to the V
(including the outermost blocks) using a high voltage block protection technique (in-system
or programmer technique). See
When V
bypass mode. When V
During unlock bypass program operations the memory draws I
programming circuits. See the description of the Unlock Bypass command in the command
interface section. The transitions from V
t
Never raise V
memory may be left in an indeterminate state.
A 0.1 μF capacitor should be connected between the V
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during unlock bypass program, I
VHVPP
PP
It protects the last block at the end of the addressable area (M29W640GH) or the first
block at the beginning of the addressable area (M29W640GL)
It protects the last two blocks at the end of the addressable area (M29W640GT) and
the first two boot blocks at the beginning of the addressable area (M29W640GB).
/Write Protect (V
PP
PP
, see
PP
PP
PP
/Write Protect pin provides two functions. The V
/Write Protect pin may be left floating or unconnected (see
/Write Protect is Low, V
/Write Protect is High, V
/Write Protect is raised to V
Figure 18: Accelerated program timing
PP
PP
/Write Protect to V
/Write Protect is Low, even when RP is at V
PP
PP
/WP pin will temporarily unprotect any block previously protected
/Write Protect returns to V
PP
Table 6: Hardware protection
/WP)
IL
PP
IH
, the last or first block in the M29W640GH and
, the memory reverts to the previous protection status
from any mode except read mode, otherwise the
PP
IH
the memory automatically enters the unlock
to V
PP
and from V
IH
waveforms.
or V
PP
PP
/Write Protect pin and the V
IL
function allows the memory to
normal operation resumes.
PP
ID
for details.
PP
.
to V
from the pin to supply the
Table 17: DC
IH
must be slower than
PP
.
SS
15/90